碳化硅MOSFET
Wayon’s SiC MOSFET has a higher switching frequency, very low switching losses, improves the power conversion efficiency of the system and reduces the heat dissipation requirements of the thermal cycle, and with IGBT-compatible driving voltage, fully controllable dv/dt, high blocking voltage with low on-resistance, fast intrinsic diode with low reverse recovery, temperature independent turn-off switching losses, Halogen free, RoHS compliant. Mainly applicable to: PV inverter, energy storage, industrial power supply, motor drive, charging pile and other fields.
Reset
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Part No.
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Package
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BVDSS（V）
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ID(A)@Tc=25℃
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VGS（V）
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RDS(on) (mΩ)typ
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Tjmx（℃）
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Qg（nC）
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Data sheet |
