12V-100V Trench P Channel Power MOSFET

Description

Trench MOSFET:

Key Features

•High cell density design

•Ideal for miniaturized packages

•G-S ESD protection embedded

•Voltage range: 12V-200V


SGT MOSFET

Key Features

•Advance shield gate trench technology

•Ultra low gate charge

•High power integration

•Voltage range: 30V-250V

Reset
Part No. Package VDS(V) Vgs Max(V) ID(A)@TA=25℃(Max.) VGS(th)(V)(Typ.) Rds(on)(mΩ)@Vgs=10V(Max.) Rds(on)(mΩ)@Vgs=4.5V(Max.) Data sheet

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