12V-100V Trench P Channel Power MOSFET
Trench MOSFET：
Key Features
•High cell density design
•Ideal for miniaturized packages
•G-S ESD protection embedded
•Voltage range: 12V-200V
SGT MOSFET
Key Features
•Advance shield gate trench technology
•Ultra low gate charge
•High power integration
•Voltage range: 30V-250V
| Part No. | Package | VDS(V) | Vgs Max(V) | ID(A)@TA=25℃(Max.) | VGS(th)(V)(Typ.) | Rds(on)(mΩ)@Vgs=10V(Max.) | Rds(on)(mΩ)@Vgs=4.5V(Max.) | Data sheet |
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